Improvement of AZO/p-a-SiC:H contact by the p-渭c-Si:H insertion layer and its application to a-Si:H solar cells
- 作者：Ping-Kuan Chang<sup>asup> ; Fu-Ji Tsai<sup>bsup> ; Chun-Hsiung Lu<sup>bsup> ; Chih-Hung Yeh<sup>bsup> ; Na-Fu Wang<sup>csup> ; Mau-Phon Houng<sup>asup><sup> ; sup><sup>mphoung@eembox.ncku.edu.twsup>
- 关键词：ZnO ; Al ; p-渭c-Si ; H ; a-Si ; H solar cell ; PECVD ; Surface potential barrier
- 刊名：Solid-State Electronics
- 出版年：2012
- 期刊代码：73_00381101
- 类别：ph
- 出版时间：June, 2012
- 卷：72
- 期：Complete
- 页码：48-51
- 文件大小：464 K
摘要
This paper considers the method to obtain a good electric contact between the p-layer and the aluminum-doped zinc oxide (AZO) transparent conducting layer. By inserting a thin p-type hydrogenated microcrystalline silicon (p-渭c-Si:H) layer between AZO and p-type hydrogenated amorphous silicon carbide layer, the photovoltaic performances of amorphous silicon solar cells can be improved due to reduction of the surface potential barrier. As the results, remarkable improvements on V<sub>ocsub>, J<sub>scsub> and FF have been achieved with the incorporation of p-渭c-Si:H layers. Various p-渭c-Si:H layers are investigated with regard to different hydrogen dilution (H<sub>2sub>/SiH<sub>4sub>) ratios and thicknesses. The experimentally derived optimum parameters for p-渭c-Si:H films are H<sub>2sub>/SiH<sub>4sub> ratio of 150 and thickness of 9 nm. This unique treatment results in an optimized solar cell with V<sub>ocsub> = 910 mV, J<sub>scsub> = 13.55 mA/cm<sup>2sup>, FF = 0.71 and efficiency = 8.8%.