Etching characteristics of Al₂O₃ thin films in inductively coupled BCl₃/Ar plasma

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• 作者：Sun Jin Yun ; Alex ; er Efremov ; Mansu Kim ; Dae-Won Kim ; Jung Wook Lim ; Yong-Hae Kim ; Choong-Heui Chung ; Dong Jin Park ; Kwang-Ho Kwon
• 关键词：Al₂O₃ ; Etch rate ; Etch threshold ; Sputtering ; Selectivity
• 刊名：Vacuum
• 出版年：2008
• 期刊代码：83_0042207x
• 类别：ph
• 出版时间：19 June 2008
• 卷：82
• 期：11
• 页码：1198-1202
• 文件大小：431 K

摘要

The investigation of Al₂O₃ etch characteristics in the BCl₃/Ar inductively coupled plasma was carried out in terms of effects of input process parameters (gas pressure, input power, bias power) on etch rate and etch selectivity over poly-Si and photoresist. It was found that, with the changes in gas pressure and input power, the Al₂O₃ etch rate follows the behavior of ion current density while the process rate is noticeably contributed by the chemical etch pathway. The influence of input power on the etch threshold may be connected with the concurrence of chemical and physical etch pathways in ion-assisted chemical reaction.