Crystallographic investigation of homogeneous SiGe single crystals grown by the traveling liquidus-zone method

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• 作者：Hiroaki Miyata ; Satoshi Adachi ; Yasuyuki Ogata ; Tetsuya Tsuru ; Yuji Muramatsu ; Kyoichi Kinoshita ; Osamu Odawara ; Shinichi Yoda
• 关键词：A1. Mass transfer ; A2. Growth from solutions ; A2. Single-crystal growth ; B1. Germanium silicon alloys ; B2. Semiconducting germanium ; B2. Semiconducting silicon
• 刊名：Journal of Crystal Growth
• 出版年：2007
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：15 May 2007
• 卷：303
• 期：2
• 页码：607-611
• 文件大小：341 K

摘要

Crystallographic investigation of Si_0.5Ge_0.5 single crystals grown by the traveling liquidus-zone (TLZ) method was carried out using an X-ray diffraction method, a back-reflection Laue camera and X-ray rocking curve measurements. X-ray rocking curve of the Si_0.5Ge_0.5 crystals showed excellent crystallinity: full-width at half-maximum (FWHM) of the (4 4 0) diffraction was 0.009°, which is comparable to that of Si single crystal. Such high-quality Si_0.5Ge_0.5 bulk crystals were obtained for the first time and showed the superiority of the TLZ growth method for growing alloy bulk crystals.