The growth of Cr⁴⁺:YAG and Cr⁴⁺:GGG thin films by pulsed laser deposition

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• 作者：Fukaya ; Sachiyo ; Adachi ; Kyoichi ; Obara ; Minoru ; Kumagai ; Hiroshi
• 关键词：81.15.Fg ; 42.79.Gn ; 42.70.Hj ; Pulsed laser deposition ; Epitaxial growth ; Garnet ; Chromium ; Charge compensator
• 刊名：Optics Communications
• 出版年：2001
• 期刊代码：50_00304018
• 类别：ph
• 出版时间：January 15, 2001
• 卷：187
• 期：4-6
• 页码：373-377
• 文件大小：137 K

摘要

The Cr,Ca:Y₃Al₅O₁₂ (YAG) epitaxial thin films on YAG substrate have been fabricated by pulsed laser deposition (PLD) method. The chemical shifts of chromium ions in the Cr,Ca:YAG thin films is measured by X-ray photoelectron spectroscopy as a function of oxygen partial pressure in the PLD chamber. By measuring the fluorescence intensity of Cr⁴⁺ ions in Cr doped YAG thin films, it is found that the addition of Ca²⁺ ions as a charge compensator under oxygen background pressure increases the active Cr⁴⁺ ion fraction in the YAG thin film. The oxygen partial pressure of 2 mTorr is found optimum to maximize the Cr⁴⁺ number density in the Cr,Ca:YAG thin film. The Cr,Ca:GGG epitaxial thin film also shows the dependence of Cr⁴⁺ fluorescence on the oxygen partial pressure during deposition.