Fabrication of highly ytterbium (Yb³⁺)-doped YAG thin film by pulsed laser deposition

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• 作者：Shimoda ; Tomoyuki ; Ishida ; Yoshihisa ; Adachi ; Kyoichi ; Obara ; Minoru
• 关键词：81.15.Fg ; 42.70.Hj ; 42.55.Lt ; Pulsed laser deposition ; Optical thin film ; Yb ; YAG ; Waveguide laser
• 刊名：Optics Communications
• 出版年：2001
• 期刊代码：50_00304018
• 类别：ph
• 出版时间：July 1, 2001
• 卷：194
• 期：1-3
• 页码：175-179
• 文件大小：97.9 K

摘要

As an infrared laser waveguide, the epitaxial growth of 5μm-thick ytterbium (Yb³⁺)-doped yttrium aluminum garnet (YAG) thin films on YAG(111) (Y₃Al₅O₁₂) substrate has been demonstrated by pulsed KrF laser deposition with post-annealing. Highly Yb³⁺-doped (up to 100 at.%) YAG films have been epitaxially grown on YAG(111). The crystalline quality of the grown films does not degrade even with high doping concentrations of Yb³⁺ ions up to 100 at.%. The roughness (root mean square) of the film is measured as 1.27 nm without droplets or particulates. The optical properties of these films have been characterized in terms of absorption spectra, fluorescence spectra and fluorescent lifetime. The refractive index of n at 1.03μm is measured to be 1.851±0.0141 for 50 at.%Yb³⁺:YAG. An emission lifetime of 0.90±0.01 ms is obtained for 1.03μm transition.