Effect of nanotextured back reflectors on light trapping in flexible silicon thin-film solar cells

详细信息	查看全文 | 推荐本文 |

• 作者：Jun-Sik Cho ; ^{jscho@kier.re.kr} ; Sanghun Baek ; Sang-Hyun Park ; Joo Hyung Park ; Jinsu Yoo ; Kyung Hoon Yoon
• 关键词：Back reflector ; Short-circuit current ; Silicon thin-film solar cell ; Light scattering
• 刊名：Solar Energy Materials and Solar Cells
• 出版年：2012
• 期刊代码：81_09270248
• 类别：ce
• 出版时间：July, 2012
• 卷：102
• 期：Complete
• 页码：50-57
• 文件大小：1068 K

摘要

Nanotextured Ag back reflectors were used to enhance the short-circuit current of flexible silicon thin-film solar cells with an n-i-p configuration by means of optical confinement. A nanotextured topography with a root-mean-square (蟽_rms) surface roughness of 88.0 nm was successfully induced by abnormal grain growth of Ag films, which was controlled by varying the deposition temperature and film thickness in a direct current (dc) magnetron sputtering process. Effective light scattering of the long wavelengths over 600 nm was achieved on the nano-textured Ag back reflectors, resulting in enhanced absorption of weakly absorbing, long-wavelength light in the hydrogenated amorphous silicon (a-Si:H) and microcrystalline silicon (渭c-Si:H) thin-film solar cells. Compared with similar reference cells on flat back reflectors, a 34.4%increase in the short-circuit current density (J_sc) for an a-Si:H solar cell and an 11.9%for 渭c-Si:H were observed in the solar cells on the nanotextured back reflectors, with little reduction in fill factor (FF) and open circuit voltage (V_oc). Due to the increase of the J_sc by the improved light absorption at the long wavelengths, the conversion efficiency (畏) of the a-Si:H and 渭c-Si:H solar cells increased from 5.59%to 7.60%and from 4.31%to 4.64%, respectively.