Low power flexible organic thin film transistors with amorphous Ba_0.7Sr_0.3TiO₃ gate dielectric grown by pulsed laser deposition at low temperature

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• 作者：Z.R. Wang^a ; J.Z. Xin^b ; X.C. Ren^c ; X.L. Wang^d ; C.W. Leung^b ; ^{Dennis.Leung@inet.polyu.edu.hk} ; S.Q. Shi^a ; ^{mmsqshi@inet.polyu.edu.hk} ; A. Ruotolo^d ; P.K.L. Chan^a ; ^c ; ^pklc@hku.hk
• 关键词：Flexible organic transistor ; High-k dielectric ; Low operating power ; Pulsed laser deposition ; Bending test
• 刊名：Organic Electronics
• 出版年：2012
• 期刊代码：137_15661199
• 类别：et
• 出版时间：July, 2012
• 卷：13
• 期：7
• 页码：1223-1228
• 文件大小：854 K

摘要

We deposited amorphous Ba_0.7Sr_0.3TiO₃ (BST) on silicon and plastic substrate under 110 掳C by pulsed laser deposition (PLD) and use it as the dielectric of the organic transistor. Depends on the thickness of BST layer, the highest mobility of the devices can achieve 1.24 cm² V^鈭? s^鈭? and 1.01 cm² V^鈭? s^鈭? on the silicon and polyethylene naphthalate (PEN) substrate, respectively. We also studied the upward and downward bending tests on the transistors and the dielectric thin films. We found that the BST dielectric pentacene transistor can maintain the mobility at 0.5 cm² V^鈭? s^鈭? or higher while the bending radius is around 3 mm in both upward and downward bending. Our finding demonstrates the potential application of PLD growth high-k dielectric in the large area organic electronics devices.