Superlattice-like GaSb/Sb₂Te₃ films for low-power phase change memory

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• 作者：Yegang Lu^a ; ^b ; ^{yglv@mail.sim.ac.cn} ; Sannian Song^a ; ^{songsannian@gmail.sim.ac.cn} ; Zhitang Song^a ; Wanchun Ren^a ; ^b ; Yulin Xiong^a ; ^b ; Feng Rao^a ; Liangcai Wu^a ; Yan Cheng^a ; Bo Liu^a
• 关键词：Phase change memory ; Multilayers ; Electric resistivity ; Simulation
• 刊名：Scripta Materialia
• 出版年：2012
• 期刊代码：157_13596462
• 类别：et
• 出版时间：May, 2012
• 卷：66
• 期：9
• 页码：702-705
• 文件大小：441 K

摘要

The crystallization temperature of superlattice-like GaSb/Sb₂Te₃ films can be easily changed by the number of interfaces and thickness ratio between GaSb and Sb₂Te₃ layers. The reset operation can be completed by an electric pulse as short as 20 ns for the GaSb(4 nm)/Sb₂Te₃(6 nm)-based phase-change memory test cell. This test cell exhibited endurance up to 1.4 脳 10⁴ cycles. The thermal simulation confirmed that the improved performance of superlattice-like GaSb/Sb₂Te₃ films originated from the low thermal conductivity and low melting point.