Synthesis and optical properties of halogen-doped ZnO phosphor
- 作者：Zhenwei Tao ; Xibin Yu ; Xiaoyan Fei ; Jie Liu ; Yongheng Zhao ; Honge Wu ; Guangqian Yang ; Shiping Yang ; Liangzhun Yang
- 关键词：Zinc oxide ; Phosphors ; Semiconductors ; Photoluminescence
- 刊名：Materials Letters
- 出版年：2008
- 期刊代码：59_0167577x
- 类别：ms
- 出版时间：30 June 2008
- 卷：62
- 期：17-18
- 页码：3018-3020
- 文件大小：310 K
摘要
A simple and convenient method has been demonstrated to fabricate halogen-doped ZnO phosphors via annealing the mixture of ZnS and KX (X = Cl, Br, I) in air. The as-prepared products were characterized by X-ray diffraction (XRD), photoluminescence (PL), and photoluminescence excitation (PLE), respectively. The experimental results indicate that the green PL intensity and the excitation band at 
3.20eV are enhanced significantly for the samples doped with halogens, compared with those of the undoped ZnO. The incorporation of halogens into ZnO is proposed to increase the oxygen vacancies and consequently the PL intensity of the green emission band is highly enhanced.
3.20eV are enhanced significantly for the samples doped with halogens, compared with those of the undoped ZnO. The incorporation of halogens into ZnO is proposed to increase the oxygen vacancies and consequently the PL intensity of the green emission band is highly enhanced.