Effect of substrate temperature on structure and electrical resistivity of laser-ablated IrO₂ thin films

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• 作者：Chuanbin Wang ; Yansheng Gong ; Qiang Shen ; Lianmeng Zhang
• 关键词：IrO₂ thin films ; Laser ablation ; Substrate temperature ; Structure ; Electrical resistivity
• 刊名：Applied Surface Science
• 出版年：2006
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：30 December 2006
• 卷：253
• 期：5
• 页码：2911-2914
• 文件大小：386 K

摘要

IrO₂ thin films were prepared on Si(1 0 0) substrates by laser ablation. The effect of substrate temperature (T_sub) on the structure (crystal orientation and surface morphology) and property (electrical resistivity) of the laser-ablated IrO₂ thin films was investigated. Well crystallized and single-phase IrO₂ thin films were obtained at T_sub = 573–773 K in an oxygen partial pressure of 20 Pa. The preferred orientation of the laser-ablated IrO₂ thin films changed from (2 0 0) to (1 1 0) and (1 0 1) depending on T_sub. With the increasing of T_sub, both the surface roughness and crystallite size increased. The room-temperature electrical resistivity of IrO₂ thin films decreased with increasing T_sub, showing a low value of (42 ± 6) × 10⁻⁸ Ω m at T_sub = 773 K.