Effect of annealing ambient on electrical and optical properties of Ga-doped Mg_xZn_{1鈭?span style='font-style: italic'>x}O films

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• 作者：Jinming Liu ; Xiaoru Zhao ; ^{xrzhao@nwpu.edu.cn} ; Libing Duan ; Huinan Sun ; Xiaojun Bai ; Liu Chen ; Changle Chen
• 关键词：Ga doping ; MgxZn1&minus ; xO films ; Sol&ndash ; gel ; Annealing process
• 刊名：Applied Surface Science
• 出版年：2012
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：15 June, 2012
• 卷：258
• 期：17
• 页码：6297-6301
• 文件大小：1027 K

摘要

2 at.%Ga-doped Mg_xZn_1鈭?em>xO (x = 0-8%) films have been prepared by sol-gel dip-coating method, and the effects of three different post annealing ambient: (a) vacuum annealing under air pressure of 鈭?0^鈭? Pa; (b) annealing in nitrogen atmosphere, and (c) annealing in argon-hydrogen (96%argon + 4%hydrogen) atmosphere on the electrical and optical properties of the films are investigated. When treated by these three different post-annealing ambient, both the resisitivity and band gap of the films increase with Mg doping contents increasing from 0 to 8 at.%. The vacuum annealed films show much lower resistivity than those treated in nitrogen or argon-hydrogen atmosphere, and the transmittance of the vacuum annealed films (鈭?0%) is also lower than those annealed by the other two methods (鈭?0%) in visible region. It shows that different post annealing ambient and ion doping could modify the optoelectronic properties of ZnO films.