Vacuum ultraviolet optical absorption band of non-bridging oxygen hole centers in SiO2 glass
- 作者：Hosono ; Hideo ; Kajihara ; Koichi ; Suzuki ; Takenobu ; Ikuta ; Yoshiaki ; Skuja ; Linards ; Hirano ; Masahiro
- 关键词：61.43.Fs ; 61.72.Ji ; 61.80.Ba ; 78.40.Pg ; E. Electron paramagnetic resonance ; E. Luminescence ; B. Laser processing
- 刊名：Solid State Communications
- 出版年：2002
- 期刊代码：101_00381098
- 类别：ms
- 出版时间：April, 2002
- 卷：122
- 期：3-4
- 页码：117-120
- 文件大小：97.7 K
摘要
An intense broad vacuum ultraviolet (VUV) optical absorption band with peak at 6.8eV and halfwidth 
1.7eV is identified in irradiated glassy SiO2 and assigned to dangling oxygen bonds (non-bridging oxygen hole centers, NBOHC). It was selectively created by photolysis of silanol (SiO–H) groups by 7.9eV photons of F2 excimer laser at low temperature. Subsequent analysis by VUV absorption, time-resolved luminescence, and electron paramagnetic resonance spectroscopies during thermal annealing showed an exact correlation to the well-known 4.8 and 2eV absorption and 1.9eV luminescence bands of NBOHC. The estimated oscillator strength of the 6.8eV band is f0.05. This band may be one of the dominant causes of VUV optical absorption induced by excimer-laser irradiation of silica.
1.7eV is identified in irradiated glassy SiO2 and assigned to dangling oxygen bonds (non-bridging oxygen hole centers, NBOHC). It was selectively created by photolysis of silanol (SiO–H) groups by 7.9eV photons of F2 excimer laser at low temperature. Subsequent analysis by VUV absorption, time-resolved luminescence, and electron paramagnetic resonance spectroscopies during thermal annealing showed an exact correlation to the well-known 4.8 and 2eV absorption and 1.9eV luminescence bands of NBOHC. The estimated oscillator strength of the 6.8eV band is f0.05. This band may be one of the dominant causes of VUV optical absorption induced by excimer-laser irradiation of silica.