UV photodetection of laterally connected ZnO rods grown on porous silicon substrate

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• 作者：M. Rajabi^a ; R.S. Dariani^a ; ^{dariani@physics.queensu.ca} ; A. Iraji Zad^b
• 关键词：ZnO ; UV photoconductor ; Porous silicon ; Chemical vapor transport and condensation ; Photocurrent response
• 刊名：Sensors and Actuators A ; Physical
• 出版年：2012
• 期刊代码：160_09244247
• 类别：et
• 出版时间：June, 2012
• 卷：180
• 期：Complete
• 页码：11-14
• 文件大小：545 K

摘要

Here, the UV photodetection of ZnO rods grown on porous silicon substrates are reported. Laterally interconnected ZnO rods have been synthesized by chemical vapor transport and condensation method on porous silicon substrates. As characterized by current-voltage measurements the I-V characteristics have linear behavior, indicating space charge effect. The device exhibits photocurrent response of 0.027 A/W for 325 nm UV light under 鈭? V bias. The rise and decay time constants under these conditions are 19 and 62 s, respectively.