Synchrotron X-ray topographic study of dislocations and stacking faults in InAs
- 作者：A. Lankinen ; T. Tuomi ; J. Riikonen ; L. Knuuttila ; H. Lipsanen ; M. Sopanen ; A. Danilewsky ; P.J. McNally ; L. O’ ; Reilly ; Y. Zhilyaev et al.
- 关键词：A1. Crystal defects ; A1. X-ray topography ; A3. Chloride vapor-phase epitaxy ; B2. Semiconducting indium compounds ; B3. X-ray detectors
- 刊名：Journal of Crystal Growth
- 出版年：2005
- 期刊代码：49_00220248
- 类别：ch
- 出版时间：2005
- 卷：283
- 期：3-4
- 页码：320-327
- 文件大小：585 K
摘要
X-ray diffraction topographs made with synchrotron radiation of an epitaxial InAs structure show images of dislocations and stacking faults. Three types of dislocations are identified and their Burgers vectors are determined from a number of topographs having different diffraction vectors and recorded on the same film at a time. Straight dislocations are found to be edge dislocations and their Burgers vector is href="/science?_ob=MathURL&_method=retrieve&_udi=B6TJ6-4GNTX7R-6&_mathId=mml24&_user=10&_cdi=5302&_rdoc=9&_handle=V-WA-A-W-VC-MsSAYZW-UUW-U-AABZWDCWAC-AABBYCZUAC-CADVWZBBD-VC-U&_acct=C000050221&_version=1&_userid=10&md5=23c9fdeb5f3182fb6271adf105a64184">
http://www.sciencedirect.com/cache/MiamiImageURL/B6TJ6-4GNTX7R-6-1R/0?wchp=dGLbVzz-zSkzV" alt="Click to view the MathML source" align="absbottom" border="0" height=15 width=40>. Also mixed dislocations are found. The overall dislocation density is about href="/science?_ob=MathURL&_method=retrieve&_udi=B6TJ6-4GNTX7R-6&_mathId=mml25&_user=10&_cdi=5302&_rdoc=9&_handle=V-WA-A-W-VC-MsSAYZW-UUW-U-AABZWDCWAC-AABBYCZUAC-CADVWZBBD-VC-U&_acct=C000050221&_version=1&_userid=10&md5=d9c1a2504b3065da3614e2808a955119">http://www.sciencedirect.com/cache/MiamiImageURL/B6TJ6-4GNTX7R-6-1S/0?wchp=dGLbVzz-zSkzV" alt="Click to view the MathML source" align="absbottom" border="0" height=15 width=71>. Large stacking faults are limited by long straight dislocations, the Burgers vector of which is href="/science?_ob=MathURL&_method=retrieve&_udi=B6TJ6-4GNTX7R-6&_mathId=mml26&_user=10&_cdi=5302&_rdoc=9&_handle=V-WA-A-W-VC-MsSAYZW-UUW-U-AABZWDCWAC-AABBYCZUAC-CADVWZBBD-VC-U&_acct=C000050221&_version=1&_userid=10&md5=076d7661b704d0312ae946e597fd95d1">http://www.sciencedirect.com/cache/MiamiImageURL/B6TJ6-4GNTX7R-6-1T/0?wchp=dGLbVzz-zSkzV" alt="Click to view the MathML source" align="absbottom" border="0" height=15 width=40>. Only a few threading dislocations are observed in the epitaxial layer grown by vapour-phase epitaxy. Their density is about href="/science?_ob=MathURL&_method=retrieve&_udi=B6TJ6-4GNTX7R-6&_mathId=mml27&_user=10&_cdi=5302&_rdoc=9&_handle=V-WA-A-W-VC-MsSAYZW-UUW-U-AABZWDCWAC-AABBYCZUAC-CADVWZBBD-VC-U&_acct=C000050221&_version=1&_userid=10&md5=be0258af8408235e95e467843a17855f">http://www.sciencedirect.com/cache/MiamiImageURL/B6TJ6-4GNTX7R-6-1V/0?wchp=dGLbVzz-zSkzV" alt="Click to view the MathML source" align="absbottom" border="0" height=15 width=62>. Small circular dots found are interpreted as indium-rich inclusions.