GaN/GaAs(100) superlattices grown by metalorganic vapor phase epitaxy using dimethylhydrazine precursor

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• 作者：Sormunen ; J. ; Riikonen ; J. ; Sopanen ; M. ; Lipsanen ; H.
• 关键词：81.15.Gh ; 68.55.Jk ; A1. Nanostructures ; A1. X-ray diffraction ; A3. Metalorganic vapor phase epitaxy ; A3. Superlattices ; B1. GaAs ; B1. GaN
• 刊名：Journal of Crystal Growth
• 出版年：2004
• 期刊代码：49_00220248
• 类别：ch
• 出版时间：October 1, 2004
• 卷：270
• 期：3-4
• 页码：346-350
• 文件大小：393 K

摘要

Superlattices of cubic gallium nitride (GaN) and gallium arsenide (GaAs) were grown on GaAs(100) substrates using metalorganic vapor phase epitaxy (MOVPE) with dimethylhydrazine (DMHy) as nitrogen source. Structures grown at low temperatures with varying layer thicknesses were characterized using high resolution X-ray diffraction and atomic force microscopy. Several growth modes of GaAs on GaN were observed: step-edge, layer-by-layer 2D, and 3D island growth. A two-temperature growth process was found to yield good crystal quality and atomically flat surfaces. The results suggest that MOVPE-grown thin GaN layers may be applicable to novel GaAs heterostructure devices.