The equivalence of displacement damage in silicon bipolar junction transistors

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• 作者：Chaoming Liu^a ; Xingji Li^a ; ^{lxj0218@hit.edu.cn} ; ^{liuch23@foxmail.com} ; Hongbin Geng^a ; Erming Rui^a ; Lixin Guo^a ; Jianqun Yang^a ; Liyi Xiao^b
• 关键词：Displacement equivalence ; Bipolar junction transistors ; Radiation effects ; Heavy ions ; Gain degradation
• 刊名：Nuclear Instruments and Methods in Physics Research Section A ; Accelerators ; Spectrometers ; Detectors and Associated Equipment
• 出版年：2012
• 期刊代码：41_01689002
• 类别：ph
• 出版时间：11 June, 2012
• 卷：677
• 期：Complete
• 页码：61-66
• 文件大小：572 K

摘要

The current gain degradation in silicon bipolar junction transistors (BJTs) is examined under the irradiation with heavy ions. To characterize the radiation damage of the BJTs, the ionizing dose D_i and displacement dose D_d verse the chip depth in the BJTs have been calculated for heavy ions. Based on the irradiation testing and calculation results, an approach to evaluate the equivalence of displacement damage in silicon BJTs is given, which could optimize the non-ionizing energy loss (NIEL) methodology and normalize the displacement damage caused by heavy ions.