SIMS depth profiling of InGaAsN/InAlAs quantum wells on InP

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• 作者：Maier ; M. ; Serries ; D. ; Geppert ; T. ; Kö ; hler ; K. ; Gü ; llich ; H. ; Herres ; N.
• 关键词：SIMS ; Depth profiling ; Laser diode ; Quantum well ; InGaAsN/InAlAs
• 刊名：Applied Surface Science
• 出版年：2003
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：January 15, 2003
• 卷：203-204
• 期：Complete
• 页码：486-489
• 文件大小：89.2 K

摘要

Quaternary In_xGa_1−xAs_yN_1−y (x>0.53, 1−y<0.03) QWs grown between In_0.52Al_0.48As barriers on InP substrate were analyzed by SIMS depth profiling. For the determination of the indium and nitrogen calibration curves, In_xGa_1−xAs (0≤x≤1) standards were used which were partly implanted with nitrogen at an energy of 75keV and a dose of 5×10¹⁵N₂molecules/cm². The QW structures were grown by molecular beam epitaxy with a nitrogen plasma source. MCs⁺ secondary ions (M=Al , Ga, In, As and N) were used for depth profiling. Nitrogen is found incorporated in In_xGa_1−xAs layers in concentrations needed for the intended laser applications. The nitrogen concentration can be reliably assessed by SIMS. Thickness and compositional data agree with the nominal data and the data determined by high resolution X-ray diffraction. The In-content is apparently not influenced by the incorporation of nitrogen and vice versa.