摘要
In the present work, the potential of hafnium silicate (HfxSiyO2) films as an alternative gate dielectric to SiO2 for future technology generations is demonstrated. Thermally stable HfxSiyO2 films are deposited from a single-source MOCVD precursor. I–V and C–V measurement data are presented and effects of post-deposition annealing on electrical properties are discussed. A 900 °C O2-anneal shows best results in terms of leakage current characteristics and is, therefore, intensively investigated.