Electrical properties of hafnium silicate films obtained from a single-source MOCVD precursor

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• 作者：Lemberger ; Martin ; Paskaleva ; Albena ; Z脙脙rcher ; Stefan ; Bauer ; Anton J. ; Frey ; Lothar ; Ryssel ; Heiner
• 刊名：Microelectronics Reliability
• 出版年：2005
• 期刊代码：128_00262714
• 类别：et
• 出版时间：May - June, 2005
• 卷：45
• 期：5-6
• 页码：819-822
• 文件大小：143 K

摘要

In the present work, the potential of hafnium silicate (Hf_xSi_yO₂) films as an alternative gate dielectric to SiO₂ for future technology generations is demonstrated. Thermally stable Hf_xSi_yO₂ films are deposited from a single-source MOCVD precursor. I–V and C–V measurement data are presented and effects of post-deposition annealing on electrical properties are discussed. A 900 °C O₂-anneal shows best results in terms of leakage current characteristics and is, therefore, intensively investigated.