An investigation of Love wave devices based on ZnO:Mg/LiNbOb>3 b> structure
- 作者：Ren-Chuan Chang ; Sheng-Yuan Chu ; Po-Wen Yeh ; Cheng-Shong Hong ; Hsin-Hsuan Huang ; Yi-Jen Huang
- 关键词：ZnO ; LiNbO
- 刊名：Sensors and Actuators B ; Chemical
- 出版年：2008
- 期刊代码：161_09254005
- 类别：et
- 出版时间：28 May 2008
- 卷：132
- 期：1
- 页码：312-318
- 文件大小：813 K
摘要
Love wave devices are very promising for sensing applications because of high sensitivity. In this paper, ZnO thin films doped with 3 mol%Mg were deposited on the 64° YX-LiNbOb>3 b> substrates by RF magnetron sputtering technique. XRD, SEM, and AFM measurements investigated characteristics of the films. Under different condition such as layer thickness and substrate temperature, the phase velocity, sensitivity, temperature coefficient of frequency and phase shift of Love wave devices in a MZO/LiNbOb>3 b> structure are presented. The maximum sensitivity of MZO/LiNbOb>3 b> appears at unheated temperature and is higher than that of the SiOb>2 b>/Quartz and SiOb>2 b>/LiTaOb>3 b> structures reported.