Low-temperature LPCVD of Si nanocrystals from disilane and trisilane (Silcore®) embedded in ALD-alumina for non-volatile memory devices

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• 作者：I. Brunets ; A.A.I. Aarnink ; A. Boogaard ; A.Y. Kovalgin ; R.A.M. Wolters ; J. Holleman ; J. Schmitz
• 关键词：LPCVD ; ALD ; Nanocrystal ; Non-volatile memory ; Silicon ; Trisilane ; Thin film
• 刊名：Surface and Coatings Technology
• 出版年：2007
• 期刊代码：106_02578972
• 类别：ms
• 出版时间：25 September 2007
• 卷：201
• 期：22-23
• 页码：9209-9214
• 文件大小：917 K

摘要

Non-volatile memory devices are realized using CVD and ALD of all active layers in a cluster tool. The floating gate consists of silicon nanocrystals. A high nanocrystal density was obtained through an enhanced nucleation rate by using disilane (Si₂H₆) as well as trisilane (Si₃H₈, known as Silcore®) as precursors for low-pressure chemical vapor deposition (instead of silane). The deposition temperature was 300–325 °C and the deposition pressure ranged between 0.1 and 10 mbar. To prevent oxidation of the nanocrystals, they were encapsulated directly after deposition with a 10-nm thick ALD-grown Al₂O₃ layer (blocking oxide). The deposition of Si-nanocrystals as a function of substrate temperature, precursor flow rate and total gas pressure was explored. Appreciable retention and endurance were measured on realized Al/TiN/Al₂O₃/Si-nanocrystal/SiO₂/Si(100) floating-gate capacitor structures.