Optical properties of GaNAs/GaAs triple quantum well structures

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• 作者：Chen ; Yo-Yu ; Lee ; Jia-Ren ; Weng ; Meng-Luan ; Lu ; Chien-Rong ; Wu ; Bing-Ruey ; Ho ; Wen-Jeng
• 关键词：A. Semiconductors ; A. Quantum wells ; D. Optical properties ; D. Luminescence
• 刊名：Journal of Physics and Chemistry of Solids
• 出版年：2004
• 期刊代码：69_00223697
• 类别：ch
• 出版时间：November, 2004
• 卷：65
• 期：11
• 页码：1857-1860
• 文件大小：132 K

摘要

Optical properties of the GaNAs/GaAs triple quantum well structures were characterized by using photoreflectance and photoluminescence spectroscopy at different temperatures. The excitonic interband transitions of the triple quantum well systems were observed in the spectral range above hν=E_g(GaN_xAs_1−x). A matrix transfer algorithm was used to match the GaN_xAs_1−x/GaAs boundary conditions and calculate the triple quantum well subband energies numerically for theoretical comparison. The internal electric field in the system was extracted from Franz–Keldysh oscillations in the photoreflectance spectra. The influences of the annealing treatment on the transition energy and the internal electric field are also analyzed.