Optical, scintillation and thermally stimulated luminescence properties of Sc₂Si₂O₇:Ce single crystal grown by floating zone method

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• 作者：He Feng^a ; Mitch M.C. Chou^a ; ^{mitch@faculty.nsysu.edu.tw} ; Chenlong Chen^a ; Wusheng Xu^b ; Zhongshi Liu^b ; Guohao Ren^c
• 关键词：Single crystal growth ; Cerium doped scandium pyrosilicate ; Optical properties ; Scintillation properties ; Thermally stimulated luminescence
• 刊名：Optical Materials
• 出版年：2012
• 期刊代码：81_09253467
• 类别：ch
• 出版时间：May, 2012
• 卷：34
• 期：7
• 页码：1003-1006
• 文件大小：422 K

摘要

Single crystal of the Sc₂Si₂O₇:Ce (SPS:Ce) was grown by floating zone method. The crystal structure is confirmed to be thortveitite with space group C2/m by X-ray diffraction measurement. The vacuum ultra violet (VUV), photoluminescence excitation (PLE) and photoluminescence (PL) spectra, fluorescence decay time and X-ray excited luminescence spectra were studied. Five sublevels of Ce³⁺ 5d level are observed through the VUV PLE spectra. The PL is dominated by the fast Ce³⁺ 5d¹4f⁰-5d⁰4f¹ transition peaking at 386 nm with a single exponential decay of 33 ns. The traps in SPS:Ce were also studied through the thermally stimulated luminescence measurement. A trap with level depth 1.16 eV with a kinetics order of 1.52 is found in the SPS:Ce crystal.