Effects of high-temperature annealing on magnetic properties of V-doped GaN thin films grown by MOCVD

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• 作者：M. Souissi^a ; ^{mnawer.souissi@fsm.rnu.tn} ; G. Schmerber^b ; A. Derory^b ; B. El Jani^c
• 关键词：Magnetic material ; GaN ; V ; Metal organic chemical vapor deposition
• 刊名：Journal of Magnetism and Magnetic Materials
• 出版年：2012
• 期刊代码：31_03048853
• 类别：ph
• 出版时间：August, 2012
• 卷：324
• 期：16
• 页码：2539-2542
• 文件大小：527 K

摘要

Metal organic chemical vapor deposition (MOCVD) has been used to grow vanadium-doped GaN (GaN:V) on c-sapphire substrate using VCl₄ as the V source. The as-grown GaN:V exhibited a saturated magnetic moment (M_s) of 0.28 emu/cm³ at room temperature. Upon high-temperature annealing treatment at 1100 掳C for 7 min under N₂ ambient, the M_s of the GaN:V increased by 39.28%to 0.39 emu/cm³. We found that rapid thermal annealing leads to a remarkable increase in surface roughness of the V-doped GaN as well as the electron concentration. The annealing also leads to a significant increase in the Curie temperature (T_C), we have identified Curie temperatures about 350 K concluded from the difference between the field-cooled and zero-field-cooled magnetizations. Structure characterization by x-ray diffraction indicated that the ferromagnetic properties are not a result of secondary magnetic phases.