Effect of Different Low Temperatures on Current Transport Mechanisms and Frequency Effect on Capacitance-voltage Curves for MOS-diodes

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• 作者：Marwa Abdul Muhsien ; Ibrahim R. Agool ; A.M. Abaas ; K.N. Abdalla
• 关键词：SiO2 ; Electrical properties ; MOS-diodes ; Thin film
• 刊名：Energy Procedia
• 出版年：2012
• 期刊代码：P136_18766102
• 类别：pw
• 出版时间：2012
• 卷：18
• 期：Complete
• 页码：312-316
• 文件大小：954 K

摘要

Thin SiO2 films with thickness 5-10 nm were grown at 700掳C in dry ambient. The devices with oxide 5 nm approach ideality case at room temperature, in this case thermoionic emission over the barrier is dominate mechanism with traps was dominate. Capacitance-voltagedata in the form of 1/C2 verse voltage plot has been used to extract doping on the space charge region. The barrier height from I-V calculated 0.65, 0.64 V for devices with oxide 5, 10 nm respectively, this value difference from values extract from C-V plot which found 0.57, 0.64 V.