A highly mismatched In_xGa_1−xAs/AlGaAs (0 x 0.5) pseudomorphic HEMT on GaAs substrate using an In_x/2Ga_1−x/2As buffer layer

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• 作者：Mizutani ; Takashi ; Maezawa ; K. ; Nozaki ; Jun-Ichi ; Arakawa ; Masashi ; Kishimoto ; Shigeru
• 刊名：Solid-State Electronics
• 出版年：1997
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：October, 1997
• 卷：41
• 期：10
• 页码：1469-1474
• 文件大小：388 K

摘要

A pseudomorphic HEMT with a large InAs mole fraction (x) for the channel is fabricated successfully on a GaAs substrate by employing a thick In_x/2Ga_{1 - x/2}As buffer layer. The transconductance increases with increasing InAs mole fraction, and shows a peak value at x = 0.4. The maximum transconductance and the cutoff frequency for a 1.7 μm gate HEMT with x = 0.4 were 500 mS mm⁻¹ and 13.3 GHz, respectively. The effective saturation velocity evaluated using the cutoff frequency increased with increasing x.