Phase-field simulations of thickness-dependent domain stability in PbTiO<sub>3sub> thin films
- 作者：G. Sheng<sup>asup><sup> ; sup><sup>shengguang1982@gmail.comsup> ; J.M. Hu<sup>bsup> ; J.X. Zhang<sup>csup> ; Y.L. Li<sup>dsup> ; Z.K. Liu<sup>asup> ; L.Q. Chen<sup>asup>
- 关键词：Phase-field models ; Ferroelectricity ; Thin films ; Simulation
- 刊名：Acta Materialia
- 出版年：2012
- 期刊代码：1_13596454
- 类别：ms
- 出版时间：May, 2012
- 卷：60
- 期：8
- 页码：3296-3301
- 文件大小：582 K
摘要
The phase-field approach is used to predict the effect of thickness on domain stability in ferroelectric thin films. The mechanism of strain relaxation and the critical thickness for dislocation formation from both the Matthews-Blakeslee and People-Bean models are employed. Thickness-strain domain stability diagrams are obtained for PbTiO<sub>3sub> thin films for different strain relaxation models. The relative domain fractions as a function of film thickness are also calculated and compared with experimental measurements in PbTiO<sub>3sub> thin films grown on SrTiO<sub>3sub> and KTaO<sub>3sub> substrates.