FinFlash with buried storage ONO layer for flash memory application

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• 作者：Sung-Jae Chang^a ; ^{changs@minatec.inpg.fr} ; Maryline Bawedin^b ; Wade Xiong^c ; Jong-Hyun Lee^d ; Jung-Hee Lee^d ; Sorin Cristoloveanu^a
• 关键词：FinFET ; SOI ; Nonvolatile memory ; Buried storage layer
• 刊名：Solid-State Electronics
• 出版年：2012
• 期刊代码：73_00381101
• 类别：ph
• 出版时间：April, 2012
• 卷：70
• 期：Complete
• 页码：59-66
• 文件大小：1796 K

摘要

Advanced FinFETs fabricated on alternative SOI substrate with SiO₂-Si₃N₄-SiO₂ (ONO) buried insulator are investigated for flash memory applications. The Si₃N₄ buried layer can easily trap charges by applying high back-gate or reasonable drain bias. The shift of the drain current, flowing at front-gate interface and resulting from interface coupling, indicates the amount of trapped/detrapped charges in the buried nitride layer. The memory effect, which is defined as the difference of drain current level, is induced by trapped/detrapped charges. The trapped charges in the buried dielectric also induce a drain current hysteresis when the back-gate bias is dynamically scanned. Systematic measurements reveal that the memory effect depends on the bias conditions and geometrical parameters.