Structural and electrical characteristics of a high-k Lu₂O₃ charge trapping layer for nonvolatile memory application

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• 作者：Tung-Ming Pan ; ^{tmpan@mail.cgu.edu.tw} ; Fa-Hsyang Chen ; Ji-Shing Jung
• 关键词：Metal-oxide-high-k-oxide-silicon (MOHOS) ; High-k Lu2O3 ; Charge trapping layer ; Flash memory
• 刊名：Materials Chemistry and Physics
• 出版年：2012
• 期刊代码：58_02540584
• 类别：ms
• 出版时间：16 April, 2012
• 卷：133
• 期：2-3
• 页码：1066-1070
• 文件大小：471 K

摘要

In this article, we reported a metal-oxide-high-k-oxide-silicon (MOHOS)-type memory structure fabricating a high-k Lu₂O₃ film as a charge trapping layer for flash memory applications. X-ray diffraction and X-ray photoelectron spectroscopy revealed the structural and chemical features of these films after they had been subjected to annealing at various temperatures. The high-k Lu₂O₃ MOHOS-type devices annealed at 800 掳C exhibited a larger threshold voltage shift (memory window of 鈭?.93 V operated at V_g = 9 V at 1 s) and better data retention (charge loss of 鈭?8%measured time up to 10⁴ s) than that had been subjected to other annealing conditions. This result suggests the higher probability for trapping of the charge carrier due to the formation of the crystallized Lu₂O₃ with a high dielectric constant of 12.8.