Structural and electrical properties of a high-k SmAlO₃ charge trapping flash memory

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• 作者：Fa-Hsyang Chen ; Tung-Ming Pan ; ^{tmpan@mail.cgu.edu.tw}
• 关键词：A. Oxides ; A. Semiconductors ; D. Dielectric properties ; D. Electrical properties
• 刊名：Journal of Physics and Chemistry of Solids
• 出版年：2012
• 期刊代码：69_00223697
• 类别：ch
• 出版时间：June, 2012
• 卷：73
• 期：6
• 页码：793-796
• 文件大小：526 K

摘要

In this study, we proposed the Al/Al₂O₃/SmAlO₃/SiO₂/Si flash memory devices using high-k SmAlO₃ film as a charge trapping layer and high-k Al₂O₃ film as a blocking layer. The structural and morphological features of these films were explored by X-ray diffraction, X-ray photoelectron spectroscopic and atomic force microscopy. The SmAlO₃ flash memory devices annealed at 800 掳C showed excellent electrical properties, such as a large memory window of 鈭?.61 V (measured at a sweep voltage range of 卤5 V) and a small charge loss of 鈭?.1%(measured time up to 10⁴ s). In addition, the charge trap centroid and charge trap density were extracted by constant current stress method.