Resistive switching of HfO₂-based Metal-Insulator-Metal diodes: Impact of the top electrode material

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• 作者：T. Bertaud^a ; ^{bertaud@ihp-microelectronics.com} ; D. Walczyk^a ; Ch. Walczyk^a ; S. Kubotsch^a ; M. Sowinska^a ; T. Schroeder^a ; Ch. Wenger^a ; C. Vallé ; e^b ; P. Gonon^b ; C. Mannequin^b ; V. Jousseaume^c ; H. Grampeix^c
• 关键词：Resistance change random access memory (RRAM) ; Metal&ndash ; Insulator&ndash ; Metal (MIM) ; HfO2 ; Metal top electrode
• 刊名：Thin Solid Films
• 出版年：2012
• 期刊代码：78_00406090
• 类别：ph
• 出版时间：1 May, 2012
• 卷：520
• 期：14
• 页码：4551-4555
• 文件大小：696 K

摘要

This paper deals with the impact of the top metal electrode on the resistive switching properties of HfO₂-based Metal-Insulator-Metal diodes. By screening five different metals as top electrode, Al-Cu-Hf-Pt-Ti, we have demonstrated the feasibility of the resistive switching effect on HfO₂. Metals with a low enthalpy of formation of oxides 螖H_f⁰ (Pt and Cu) lead to uni-polar switching whereas easily oxidizable metals with a higher 螖H_f⁰ (Al, Hf and Ti) lead to bipolar switching. Cu-, Hf- and Pt-based devices show a degradation of the top electrode after the forming step by the formation of bubbles whereas such phenomenon was not observed in Al- and Ti-based devices. 200 switching cycles were performed on each device in order to extract the main parameters of the resistive switching effect: I_ON and I_OFF currents in the mA range, R_OFF/R_ON resistance ratio up to 5, V_set and V_reset, voltage levels around 1 V, and powers dissipated during read and write operations in the 渭W and mW range, respectively. For all systems, the reset process dissipates higher power than the set process. From these results, the Ti top adlayer shows the best performance in terms of stability and resistive switching characteristics.