摘要
A conductive coating of doped amorphous silicon carbide (a-Si:C:H) has been used in the fabrication of microdot (MDOT) detectors, to minimize the defocusing, away from the anodes, of the drifting primary electrons. This defocusing is caused by the existence of the readout line passing below the insulating layer. The defocusing effect and other effects of the conductive coating on the performance of these detectors fabricated in this way have been investigated.