Morphology and interfacial properties of microrelief metal–semiconductor interface

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• 作者：Dmitruk ; N.L. ; Borkovskaya ; O.Yu. ; Dmitruk ; I.N. ; Mamykin ; S.V. ; Horvath ; Zs.J. ; Mamontova ; I.B.
• 关键词：Metal/semiconductor interface ; Microrelief ; Electronic properties
• 刊名：Applied Surface Science
• 出版年：2002
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：May 8, 2002
• 卷：190
• 期：1-4
• 页码：455-460
• 文件大小：201 K

摘要

The effect of the morphology of Au/GaAs interface microrelief, prepared by chemical anisotropic etching, on current flow mechanism, electronic and recombination properties of interface has been investigated. Simulation of I–V curves and optical transmittance of light into semiconductor was made on the basis of the developed theories taking into account the barrier height distribution and the effect of scattering of light by low microrelief.