High-k Mg-doped ZST for microwave applications

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• 作者：A. Ioachim ; M.G. Banciu ; M.I. Toacsen ; L. Nedelcu ; D. Ghetu ; H.V. Alex ; ru ; C. Berbecaru ; A. Dutu ; G. Stoica
• 关键词：High-k dielectrics ; Mg-doped ZST ; Dielectric resonators ; Microwaves
• 刊名：Applied Surface Science
• 出版年：2006
• 期刊代码：6_01694332
• 类别：ms
• 出版时间：31 October 2006
• 卷：253
• 期：1
• 页码：335-338
• 文件大小：439 K

摘要

The (Zr_0.8Sn_0.2)TiO₄ material (ZST), has been prepared by solid state reaction and characterized. The samples were sintered in the temperature range of 1260–1320 °C for 2 h. The effects of sintering parameters like sintering temperature (T_s) and MgO addition (0.2 wt.%) on structural and dielectric properties were investigated. Bulk density increases from 4900 to 5050 kg/m³ with the increase of sintering temperature. The effect of MgO addition is to lower the sintering temperature in order to obtain well sintered samples with high value of bulk density. The material exhibits a dielectric constant _r 37 and high values of the Q × f product, greater than 45,000, at microwave frequencies. The dielectric properties make the ZST material very attractive for microwave applications such as dielectric resonators, filters, dielectric antennas, substrates for hybrid microwave integrated circuits, etc.