Study of the recombination around the excitonic region of MBE ZnSe:Cl thin films

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• 作者：A.E. Mart&#xed ; nez-Cantó ; n ; Miguel Garc&#xed ; a-Rocha ; N. Garro ; I. Hern&#xe1 ; ndez-Calderó ; n ; A. Cantarero ; R. Ortega-Mart&#xed ; nez
• 关键词：Photoluminescence ; Time-resolved photoluminescence ; ZnSe ; Excitons ; Decay time ; Semiconductors
• 刊名：Microelectronics Journal
• 出版年：2008
• 期刊代码：72_00262692
• 类别：ms
• 出版时间：March-April 2008
• 卷：39
• 期：3-4
• 页码：582-585
• 文件大小：202 K

摘要

The recombination processes around the excitonic region of undoped ZnSe and chlorine doped ZnSe thin films were studied by continuous-wave photoluminescence (cw-PL) and time-resolved photoluminescence (TRPL) spectroscopies. Samples with different chlorine concentration were obtained by varying the temperature of the Cl source. The evolution of the PL signal and its decay time were analyzed as a function of temperature. Activation energy (E<sub>asub>) values associated to the quenching of the D<sup>0sup>X and band-to-band emission were obtained from the temperature dependent cw-PL experiments. The activation energy was lower for the film with higher Cl content. The characteristic exponential decay time (τ<sub>PLsub>) of the PL signal decreased with increasing Cl concentration.