Confirmation of bulk modulus model of III-V compounds under pressure effect using tight-binding method

详细信息	查看全文 | 推荐本文 |

• 作者：Y. Al-Douri^a ; ^{yaldouri@yahoo.com}
• 关键词：III&ndash ; V compounds ; TB method ; Bulk modulus
• 刊名：Optik - International Journal for Light and Electron Optics
• 出版年：2012
• 期刊代码：13_00304026
• 类别：et
• 出版时间：June, 2012
• 卷：123
• 期：11
• 页码：989-992
• 文件大小：310 K

摘要

The electronic band structure for GaAs, GaSb and GaP is studied using semi-empirical tight-binding sp³s* method for tetrahedrally coordinated cubic materials. By means of our empirical model, the structural property of bulk modulus at critical transition pressure is calculated. Also, the GaAs, GaSb and GaP compounds are found to be indirect-gap semiconductors under pressure effect. The noticed behaviour of the bonding character reflects the structural phase transition. These results are in good agreement with experimental and theoretical data.