Direct simulation Monte Carlo modeling of metal vapor flows in application to thin film deposition
- 作者：Ayyaswamy Venkattraman ; Alina A. Alexeenko ; alexeenk@purdue.edu
- 关键词：Thin film depositions ; Direct simulation Monte Carlo ; Molecular model ; Aluminum ; Coevaporation
- 刊名：Vacuum
- 出版年：2012
- 期刊代码：83_0042207x
- 类别：ph
- 出版时间：31 May, 2012
- 卷：86
- 期：11
- 页码：1748-1758
- 文件大小：1936 K
摘要
Thin films of metal for electronics, nano/microelectromechanical systems and optical coatings are often prepared by various vacuum deposition techniques. Modeling such metal vapor flows using methods such as the direct simulation Monte Carlo (DSMC) can aid in the design and analysis of deposition systems and accelerate development of films with desired properties. The determination of suitable variable hard sphere (VHS) molecular model parameters for DSMC simulations using measured growth rate distribution is demonstrated with aluminum vapor as an example. Axisymmetric DSMC simulations using a VHS model corresponding to a reference diameter of 0.8聽nm and a viscosity-temperature exponent of 1 are shown to agree well with available experimental data. The model is then used in two-dimensional DSMC simulations to study the interaction of plumes from multiple sources. An expression for substrate mass flux assuming no interaction between sources agrees well with DSMC simulations for a mass flow rate of 0.1聽g/min corresponding to a Knudsen number (Kn) of about 0.1. The non-additive interaction of plumes at a higher flow rate of 1聽g/min corresponding to a Kn of about 0.01 results in a higher mass flux non-uniformity in the DSMC simulations which is not captured by the simplified analytical expression.