摘要
This paper reports on the ionoluminescence (IL) of Zn2SiO4:Eu3+ nanophosphors bombarded with 100 MeV Si7+ ions with fluences in the range (3.91-21.48) 脳 1012 ions cm鈭?. The prominent IL emission peaks recorded at 580, 590, 612, 650 and 705 nm are attributed to the luminescence centers activated by Eu3+ ions. It is observed that IL intensity decreases and saturates with increase of Si7+ ion fluence. Fourier transform infrared (FT-IR) studies confirm surface/bulk amorphization for a fluence of (3.91-21.48) 脳 1013 ions cm鈭?. These results show degradation of SiO (2谓3) bonds present on the surface of the sample and/or due to lattice disorder produced by dense electronic excitation under heavy ion irradiation. These results are discussed in detail.