Resistance-temperature relation and atom cluster estimation of In-Bi system melts

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• 作者：Haoran Geng^a ; ^{mse_genghr@ujn.edu.cn} ; Zhiming Wang^b ; Yongzhi Zhou^a ; Cancan Li^a
• 关键词：In&ndash ; Bi melt ; Resistivity ; Structure of melt
• 刊名：Materials Chemistry and Physics
• 出版年：2012
• 期刊代码：58_02540584
• 类别：ms
• 出版时间：16 April, 2012
• 卷：133
• 期：2-3
• 页码：799-803
• 文件大小：436 K

摘要

A testing device for the resistivity of high-temperature melt was adopted to measure the l resistivity of In-Bi system melts at different temperatures. It can be concluded from the analysis and calculation of the experimental results that the resistivity of In_xBi_100鈭?em>x (x = 0-100) melt is in linear relationship with temperature within the experiment temperature range. The resistivity of the melt decreases with the increasing content of In. The fair consistency of resistivity of In-Bi system melt is found in the heating and cooling processes. On the basis of Novakovic's assumption, we approximately estimated the content of InBi atom clusters in In_xBi_100鈭?em>x melts with the resistivity data by equation 蟻 鈮?#xA0;蟻_InBix_InBi + 蟻_m(1 鈭?#xA0;x_InBi). In the whole components interval, the content corresponds well with the mole fraction of InBi clusters calculated by Novakovic in the thermodynamic approach. The mole fraction of InBi type atom clusters in the melts reaches the maximum at the point of stoichiometric composition In₅₀Bi₅₀.