Defect reactions associated with the dissociation of the phosphorus–vacancy pair in silicon

详细信息	查看全文 | 推荐本文 |

• 作者：Markevich ; V.P. ; Andersen ; O. ; Medvedeva ; I.F. ; Evans-Freeman ; J.H. ; Hawkins ; I.D. ; Murin ; L.I. ; et. al.
• 关键词：81.40.W ; 61.72.C ; 78.30.A ; Silicon ; Vacancy&ndash ; phosphorus pair ; Carbon&ndash ; carbon pair ; Laplace DLTS
• 刊名：Physica B
• 出版年：2001
• 期刊代码：53_09214526
• 类别：ph
• 出版时间：December, 2001
• 卷：308-310
• 期：Complete
• 页码：513-516
• 文件大小：102 K

摘要

The generation and annihilation of defects upon electron irradiation and subsequent annealing has been studied by high-resolution deep level transient spectroscopy (Laplace DLTS) in phosphorus-doped silicon crystals which were grown by the vacuum float zone technique. It was found that the disappearance of phosphorus–vacancy pairs in the temperature range of 125–175°C is accompanied by a significant reduction in the concentration of C_i–C_s complexes and formation of a defect with an acceptor level at E_c−0.21eV. The level was assigned to a pair of substitutional carbon atoms (C_s–C_s), which is formed when the free vacancy released upon E-centre annealing is captured by the C_i–C_s complex.