Microstructure of free-standing epitaxial Ni-Mn-Ga films before and after variant reorientation

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• 作者：S.R. Yeduru^a ; ^{srinivasy99@gmail.com} ; ^{srinivasa.yeduru@kit.edu} ; A. Backen^b ; C. Kü ; bel^c ; D. Wang^c ; T. Scherer^c ; S. Fä ; hler^b ; L. Schultz^b ; M. Kohl^a
• 关键词：Magnetic shape memory alloy ; Epitaxial films ; Ni&ndash ; Mn&ndash ; Ga ; Microstructure
• 刊名：Scripta Materialia
• 出版年：2012
• 期刊代码：157_13596462
• 类别：et
• 出版时间：April, 2012
• 卷：66
• 期：8
• 页码：566-569
• 文件大小：338 K

摘要

We investigate the effect of stress-induced reorientation on the martensitic microstructure of free-standing epitaxial Ni-Mn-Ga films. Scanning electron microscopy and high-resolution transmission electron microscopy reveal that the films exhibit coexisting phases of 14 M and NM martensite after release from the MgO(1 0 0) substrate. After superplastic straining the film by 12%by applying tensile stress along a [0 0 1] direction of the Ni-Mn-Ga unit cell, the corresponding crystal structure is identified to be detwinned NM martensite.