Reduction of tensile stress in GaN grown on Si(111) by inserting a low-temperature AlN interlayer
- 作者：Zhang ; B.S. ; Wu ; M. ; Liu ; J.P. ; Chen ; J. ; Zhu ; J.J. ; Shen ; X.M. ; Feng ; G. ; Zhao ; D.G. ; Wang ; Y.T. ; et. al.
- 关键词：07.10.Pz ; 68. 55. Jk ; 81. 15. Gh ; 78. 66. Fd ; A1. X-ray diffraction ; A3. Metalorganic chemical vapor deposition ; B1. Nitride ; B2. Semiconductor III&ndash ; V materials
- 刊名：Journal of Crystal Growth
- 出版年：2004
- 期刊代码：49_00220248
- 类别：ch
- 出版时间：October 1, 2004
- 卷：270
- 期：3-4
- 页码：316-321
- 文件大小：264 K
摘要
This study describes the growth of a low-temperature AlN interlayer for crack-free GaN growth on Si(111). It is demonstrated that, in addition to the lower growth temperature, growth of the AlN interlayer under Al-rich conditions is a critical factor for crack-free GaN growth on Si(111) substrates. The effect of the AlN interlayer thickness and NH3/TMAl ratios on the lattice constants of subsequently grown high temperature GaN was investigated by X-ray triple crystal diffraction. The results show that the elimination of micro-cracks is related to the reduction of the tensile stress in the GaN epitaxial layers. This was also coincident with a greater number of pits formed in the AlN interlayer grown under Al rich conditions. It is proposed that these pits act as centers for the generation of misfit dislocations, which in turn leads to the reduction of tensile stress.