Temperature dependence of the transport properties of spin field-effect transistors built with InAs and Si channels
- 作者：D. Osintsev ; osintsev@iue.tuwien.ac.at ; V. Sverdlov sverdlov@iue.tuwien.ac.at ; Z. Stanojevi膰 stanojevic@iue.tuwien.ac.at ; A. Makarov makarov@iue.tuwien.ac.at ; S. Selberherr selberherr@iue.tuwien.ac.at
- 关键词：Spin field-effect transistor ; Dresselhaus spin&ndash ; orbit interaction ; Tunneling magnetoresistance ; Conductance ; Temperature ; Current
- 刊名：Solid-State Electronics
- 出版年：2012
- 期刊代码：73_00381101
- 类别：ph
- 出版时间：May, 2012
- 卷：71
- 期：Complete
- 页码：25-29
- 文件大小：464 K
摘要
We study the transport properties of the Datta-Das spin field-effect transistor built on InAs and Si. First, we demonstrate that the amplitude of the magnetoresistance oscillations as a function of the band mismatch between the ferromagnetic contacts and the semiconductor channel made of InAs decreases dramatically with increasing temperature. A shorter InAs channel is needed to create an InAs-based SpinFET which will operate at higher temperatures. Second, we show that the [1 0 0] orientation of the fin is preferable for silicon SpinFETs due to stronger modulation of the conductance as a function of spin-orbit interaction and magnetic field. Short silicon fins can be used for current modulation as a function of the conduction band mismatch between the channel and the ferromagnetic contacts only at relatively low temperatures. In contrast, longer silicon channels allow a TMR modulation at room temperature by changing the strength of the spin-orbit interaction through the gate bias.