Lateral shifts of spin electron beams in antiparallel double nanostructure
- 作者：Yong-Hong Kong ; Mao-Wang Lu ; m_w_lu@126.com ; Sai-Yan Chen ; Gui-Lian Zhang
- 关键词：Magnetic nanostructure ; Semiconductor spintronic ; Goos&ndash ; Hä ; nchen effect ; GH shift ; Spin polarization ; Spin beam splitter
- 刊名：Journal of Magnetism and Magnetic Materials
- 出版年：2012
- 期刊代码：31_03048853
- 类别：ph
- 出版时间：August, 2012
- 卷：324
- 期：16
- 页码：2519-2522
- 文件大小：298 K
摘要
We investigate the Goos-H盲nchen (GH) effect of spin electron beams in a magnetic-barrier (MB) nanostructure consisting of antiparallel double , which can be experimentally realized by depositing two ferromagnetic (FM) stripes on top and bottom of the semiconductor heterostructure. GH shifts for spin electron beams across this type of MB nanostructures, is derived exactly, with the help of the stationary phase method. It is shown that GH shifts depend strongly on the spin directions for double with unidentical magnetic strengths, giving rise to a considerable spin polarization effect. It also is shown that spin polarization of GH shifts is closely relative to the separation and magnetic-strength difference of two . These interesting properties may provide an alternative scheme to spin-polarize electrons into the semiconductor, and the devices can serve as tunable spin beam splitters.