Experimental and theoretical study of Ge surface passivation

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• 作者：M. Houssa ; G. Pourtois ; B. Kaczer ; B. De Jaeger ; F.E. Leys ; D. Nelis ; K. Paredis ; A. Vantomme ; M. Caymax ; M. Meuris ; et al.
• 关键词：Ge surface passivation ; Electrical properties ; Physico-chemical analysis ; First-principles modeling
• 刊名：Microelectronic Engineering
• 出版年：2007
• 期刊代码：91_01679317
• 类别：cp
• 出版时间：September-October 2007
• 卷：84
• 期：9-10
• 页码：2267-2273
• 文件大小：930 K

摘要

The integration of Ge channels in high performance integrated circuits requires the passivation of the (100)Ge surface prior to gate dielectric deposition. Two promising approaches are discussed here, namely: i) the deposition of an ultrathin epi-Si layer, followed by its partial oxidation prior to high-k dielectric deposition, and ii) the exposure of the Ge surface to H₂S, resulting in the formation of Ge-S bonds. The insights that can be gained by combining physico-chemical analysis of Ge surfaces and/or electrical properties of Ge-devices, with first-principles simulations are highlighted.