Epitaxial Heusler alloy Fe3Si films on GaAs(0 0 1) substrates
- 作者：J. Herfort ; B. Jenichen ; V. Kaganer ; A. Trampert ; H.-P. Schö ; nherr and K.H. Ploog
- 关键词：Molecular beam epitaxy ; Ferromagnet/semiconductor hybrid structures ; Heusler alloys
- 刊名：Physica E
- 出版年：2006
- 期刊代码：139_13869477
- 类别：et
- 出版时间：May 2006
- 卷：32
- 期：1-2
- 页码：371-374
- 文件大小：241 K
摘要
We present results on fabrication, and structural and electrical properties of single-crystal heterostructures grown by molecular beam epitaxy. The exact stoichiometry of the Heusler alloy films can be achieved for almost lattice matched films. As evidenced by high-resolution X-ray diffraction, transmission electron microscopy, and resistivity measurements, we find an optimum growth temperature of , to obtain ferromagnetic layers with high crystal and interface perfection as well as high degree of atomic ordering. .