Toward n-channel organic thin film transistors based on a distyryl-bithiophene derivatives

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• 作者：Yahia Didane^a ; Rocio Ponce Ortiz^b ; ^&dagger ; ; ^{rocioponce@uma.es} ; Jian Zhang^a ; Keijyu Aosawa^c ; Toshinori Tanisawa^c ; Hecham Aboubakr^a ; Fré ; dé ; ric Fages^a ; Jö ; rg Ackermann^a ; Noriyuki Yoshimoto^c ; Hugues Brisset^a ; ^&Dagger ; ; ^{brisset@univ-tln.fr} ; Christine Videlot-Ackermann^a ; ^{videlot@cinam.univ-mrs.fr}
• 关键词：Organic semiconductor ; Transistor ; n-Channel ; Thin film morphology
• 刊名：Tetrahedron
• 出版年：2012
• 期刊代码：107_00404020
• 类别：ch
• 出版时间：17 June, 2012
• 卷：68
• 期：24
• 页码：4664-4671
• 文件大小：1198 K

摘要

Solution and solid-state properties of two new perfluoroalkyl end-substituted analogues of distyryl-bithiophene (CF₃-DS2T and diCF₃-DS2T) are presented. Vacuum deposited thin films were investigated by atomic force microscopy, X-ray diffraction, and implemented as active layers into organic thin film transistors. While physicochemical measurements in solution suggest a preferential hole injection and transport inside CF₃-DS2T and diCF₃-DS2T films, electrical measurements performed under high vacuum show that CF₃-DS2T behaves as n-type semiconductor while no charge transport was measured in diCF₃-DS2T. The results highlighted the importance of substituents on conjugated backbone and on the resulting fine ordering in solid state to control the charge transport.