摘要
Shaped single crystals of (LuxGd1−x)3Ga5O12 (0.0≤x≤1.0) and (Yb0.05LuxGd0.95−x)3Ga5O12 (0.0≤x≤0.9) were grown by the modified micro-pulling-down method. Continuous solid solutions with garnet structure and a linear compositional dependency of crystal lattice parameter in the system Yb:(Gd,Lu)3Ga5O12 are formed. Measured optical absorption spectra of the samples show 4f–4f transitions related to Gd3+ ion at 275 and 310nm, and also an onset of charge transfer transitions from oxygen ligands to Gd3+ or Yb3+ cations below 240nm. A complete absence of Yb3+ charge transfer luminescence under X-ray excitation in any of the investigated samples was explained by the overlapping of charge transfer absorption of Yb3+ by that of Gd3+ ions. For specific composition of Lu1.5Gd1.5Ga5O12 an intense defect-host lattice-related emission, which achieve of about 40%integrated intensity compared with Bi4Ge3O12, was found.