Sputtering of copper atoms by keV atomic and molecular ions: A comparison of experiment with analytical and computer based models

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• 作者：Gillen ; D.R. ; Graham ; W.G. ; Goelich ; A
• 关键词：52.65.Pp ; 52.75.Rx ; NRMPI ; Ion&ndash ; surface interaction ; Sputtering ; Monte-Carlo simulation ; Atom energy distribution
• 刊名：Nuclear Instruments and Methods in Physics Research Section B ; Beam Interactions with Materials and Atoms
• 出版年：2002
• 期刊代码：42_0168583x
• 类别：ph
• 出版时间：October, 2002
• 卷：194
• 期：4
• 页码：409-416
• 文件大小：145 K

摘要

Non-resonant multiphoton ionisation combined with quadrupole and time-of-flight analysis has been used to measure energy distributions of sputtered copper atoms. The sputtering of a polycrystalline copper target by 3.6 keV Ar⁺, N⁺ and CF₂⁺ and 1.8 keV N⁺ and CF₂⁺ ion bombardment at 45° has been investigated. The linear collision model in the isotropic limit fails to describe the high energy tail of the energy distributions. However the TRIM.SP computer simulation has been shown to provide a good description. The results indicate that an accurate description of sputtering by low energy, molecular ions requires the use of computer simulation rather than analytical approaches. This is particularly important when considering plasma–surface interactions in plasma etching and deposition systems.