Oxidation behavior of TiAl protected by Si+Nb combined ion implantation

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• 作者：Li ; X.Y. ; Taniguchi ; S. ; Zhu ; Y.-C. ; Fujita ; K. ; Iwamoto ; N. ; Matsunaga ; Y. ; Nakagawa ; K.
• 关键词：A. Titanium aluminides ; based on TiAl ; B. Oxidation ; C. Surface finishing ; F. Ion-beam methods
• 刊名：Intermetallics
• 出版年：2001
• 期刊代码：36_09669795
• 类别：ms
• 出版时间：May, 2001
• 卷：9
• 期：5
• 页码：443-449
• 文件大小：919 K

摘要

The combined ion implantation of Si+Nb at room temperature and at 1173 K with C contamination was employed to improve the oxidation resistance of a γ-TiAl based alloy [Ti–48Al–1.3Fe–1.1V–0.3B (at%)]. The implantation was conducted with a dose of 3.0×10²¹ ions/m² and at an accelerate voltage of 50 kV for each element. The isothermal oxidation behavior of above treated alloys was tested at 1173 K for 349.2 ks in air. The oxide scales formed by short-term and long-term oxidation were characterized by AES, SEM and XRD. It was found that the alloy implanted with Si+Nb at 1173 K with C contamination shows excellent long-term oxidation resistance in comparison to that of the room temperature Si+Nb implanted alloy, although the latter also significantly lowers the oxidation rate of non-implanted alloy. A continuous, compact and thus a protective Al₂O₃ layer was formed in the scale of the alloy implanted with Si+Nb at 1173 K with C contamination after long-term oxidation, and this layer contributed to the best oxidation resistance. It is also indicated that the introduction of Si into Nb modified layer and, in particularly C in conjunction with Nb and Si in the modified layer can further effectively favor the formation of the continuous Al₂O₃ layer in the scale on alloy during high temperature oxidation.