We have investigated the structural, magnetic and electrical transport properties of a series of ABO
3-type perovskite compounds, La
0.67Ba0.33Mn
1鈭?em>xCr
xO
3 (0 鈮?#xA0;
x 鈮?#xA0;0.15), which strongly depend on the doping level
x. The slight difference between the ionic radii of Cr
3+ and Mn
3+ causes no change in the structure when
x 鈮?#xA0;0.1, remaining rhombohedral (space group R-3C), while for
x = 0.15 the structure becomes cubic (space group Pm-3m). Energy dispersive X-ray analysis (EDAX) confirms the e
xpected stoichiometry of all samples. Upon Cr doping on the Mn site, the lattice parameters, the unit cell volume and the BOB bond angle are reduced. All samples present a single magnetic transition from ferromagnetic to paramagnetic phase, showing a decrease of the Curie temperature
Tc and the magnetization M when
x increases (
x 鈮?#xA0;0.15). However, Cr doping makes the saturation magnetization at 5 K to decrease, which indicates that the Cr
3+ moments tend to be antiparallel to the Mn
3+ moments at low temperature.
The Cr-doped manganites exhibit a large variation in resistivity values. The increase of Cr doping (x 鈮?#xA0;0.15) leads to an increase of the electrical resistivity. Below 10 at.%of Cr3+, the electrical resistivity shows a metallic behavior, which is well fitted by the relation 蟻 = 蟻0 + 蟻2T2 + 蟻4.5T4.5, indicating the importance of the grain/domain boundary, the electron-electron scattering effects and, to a lesser extent, the electron-(magnon, phonon) scattering effects in the mechanism of conduction. On the other hand, the 15 at.%of Cr3+ doping makes the material to exhibit a semiconductor behavior, for which the electronic transport can be explained by a variable range hopping (VRH) and small polaron hopping (SPH) models. Results are consistent with a reduction of the number of available hopping sites for the Mn eg (鈫? electron due to the substitution of Mn3+ by Cr3+, which suppresses the double exchange (DE) interactions.